Maurizio Boscardin

Abstract

Maurizio Boscardin was born in Rovereto, in 1960. He received the Physics degree from the University of Trento in 1988.  In the same year, he joined the Microelectronics Division of the Institute for Scientific and Technological Research (ITC/irst) of Trento, Italy, where he was initially involved in the development of CCD/CMOS technologies for optical imagers. Since 1998, he has been heading the Silicon Radiation Detector group at ITC/irst. The research activity of Maurizio Boscardin deals with technology development for special sensor fabrication, with particular emphasis on high resistivity silicon radiation/particle detectors.
The main research topics have recently been concerned with:
i) Development of microstrip detectors for high energy physics experiments.
ii) Development of microstrip detectors with integrated readout electronics based on JFET transistors.
iii) Development of special technologies for fabrication of advanced radiation/particle detectors.
iv) Development of pixel detectors for medical imaging applications. He is  coauthor of more than 50 publications in international journals and conference proceedings.

Maurizio Boscardin

ITC-irst - MIS Division I - 38050 Povo, Trento (ITALY)
phone +39 (0)461 314458
fax +39 (0)461 302040/314591
e-mail : boscardi@itc.it